1 features ? rectangular led rf performance C 450 nm C 180 mw min ? high-reliability C eutectic, solder paste or preforms attach ? low forward voltage C 3.3 v typical at 120 ma ? maximum dc forward current - 200 ma ? class 2 esd rating ? ingan junction on thermally conductive sic substrate applications ? large lcd backlighting C television ? general illumination ? medium lcd backlighting C portable pcs C monitors ? led video displays ? white leds tr5050m? leds CXXXTR5050M-SXX000 data sheet crees tr5050m leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary device technology and silicon-carbide substrates to deliver superior value for the tv-backlighting and general-illumination markets. the tr5050m leds are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly effcient solution. the metal backside allows for eutectic die attach and enables superior performance from improved thermal management. the design is optimally suited for industry-standard top-view packages. CXXXTR5050M-SXX000 chip diagram dat a sheet: cpr3ex rev. - top view bottom view die cross section anode (+) 90-m diameter tr5050m led 500 x 500 m t = 175 m bottom surface 320 x 320 m cathode (-) 98-m diameter metal backside 288 x 288 m subject to change without notice. www.cree.com
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tm and tr5050m are trademarks of cree, inc. 2 cpr3ex rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c notes 1&3 CXXXTR5050M-SXX000 dc forward current note 4 200 ma peak forward current (1/10 duty cycle @ 1 khz) 250 ma led junction temperature 150c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 120 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c450tr5050m-sxx000 2.7 3.3 3.5 2 20 mechanical specifcations CXXXTR5050M-SXX000 description dimension tolerance p-n junction area (m) 426 x 443 35 chip area (m) 500 x 500 35 chip thickness (m) 175 15 au bond pad diameter anode (m) 90 10 au bond pad thicknesses (m) 1.0 0.5 au bond pad diamater cathode (m) 98 10 bottom contact metal (um) 288 x 288 25 bottom area (m) 320 x 320 45 bottom contact metal thickness ( m) 3.0 1.0 notes: 1. maximum ratings are package-dependent. the above ratings were determined using lamps in chip-on-mcpcb (metal core pcb) packages for characterization. ratings for other packages may differ. junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). 2. product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. 3. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 120 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy encapsulant and clear epoxy die attach). optical characteristics measured in an integrating sphere using illuminance e. 4. the maximum forward current is determined by the thermal resistance between the led junction and ambient. it is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the led junction to ambient in order to optimize product performance. max if (ma) 200 max vf @max if (v) 3.5 max tj (deg c) 150 max power (w) 0.7 thermal resistance (c/w) 10 20 30 if @ tamb rth ( j-a) = tamb tamb 200 25 25 25 200 143 136 129 0 150 150 150 0 50 100 150 200 250 50 75 100 125 150 175 maximum forward current (ma) ambient temperature ( ? c) rth j- a = 10 ?c/w rth j- a = 20 ?c/w rth j- a = 30 ?c/w rth j- a = 40 ?c/w
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tm and tr5050m are trademarks of cree, inc. 3 cpr3ex rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for CXXXTR5050M-SXX000 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (cxxxtr5050m-sxxxx) orders may be flled with any or all bins (cxxxtr5050m-xxxx) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 120 ma. note: the radiant-fux values above are representative of the die in a cree 5-mm lamp. 450tr5050m-s18000 c450tr5050m-0213 c450tr5050m-0214 c450tr5050m-0215 c450tr5050m-0216 c450tr5050m-0209 c450tr5050m-0210 c450tr5050m-0211 c450tr5050m-0212 c450tr5050m-0205 c450tr5050m-0206 c450tr5050m-0207 c450tr5050m-0208 dominant wavelength (nm) 447.5 450 452.5 445 455 220.0 200.0 180.0 radiant flux (mw)
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tm and tr5050m are trademarks of cree, inc. 4 cpr3ex rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the tr5050m led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 50% 100% 150% 200% 0 50 100 150 200 relative light intensity if (ma) relative intensity vs. forward current - 3 - 2 - 1 0 1 2 3 0 50 100 150 200 dominant wavelength shift (nm) if (ma) wavelength shift vs. forward current 0% 50% 100% 150% 200% 0 50 100 150 200 relative light intensity if (ma) relative intensity vs. forward current - 3 - 2 - 1 0 1 2 3 0 50 100 150 200 dominant wavelength shift (nm) if (ma) wavelength shift vs. forward current 0 50 100 150 200 250 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage - 0.400 - 0.350 - 0.300 - 0.250 - 0.200 - 0.150 - 0.100 - 0.050 0.000 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs junction temperature 0 50 100 150 200 250 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage - 0.400 - 0.350 - 0.300 - 0.250 - 0.200 - 0.150 - 0.100 - 0.050 0.000 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs junction temperature 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative light intensity vs junction temperature - 2 - 1 0 1 2 3 4 5 6 25 50 75 100 125 150 dominant wavelength shift (nm) junction temperature ( c) dominant wavelength shift vs junction temp 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative light intensity vs junction temperature - 2 - 1 0 1 2 3 4 5 6 25 50 75 100 125 150 dominant wavelength shift (nm) junction temperature ( c) dominant wavelength shift vs junction temp
copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tm and tr5050m are trademarks of cree, inc. 5 cpr3ex rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com radiation pattern this is a representative radiation pattern for the tr5050m led product. actual patterns will vary slightly for each chip.
|
